Report on feasibility of different emitter structures for direct growth of III–V nanowires

Summary report regarding the feasibility of different emitter structures for the direct growth of III-V nanowires with low interface resistance (< 10 mOhmcm) and low emitter recombination in the silicon sub-cell. Especially the feasibility of the back-end processing has to be shown and potential consequences for the nano-wire growth will be discussed. The report will present experimental results of at least 3 different single-junction silicon solar cell designs with different emitter structure including Quantum Efficiency and IV-characteristics of devices. Measurements of emitter profiles, surface roughness and defectivity will be presented.