Report on feasibility of different emitter structures for III-V nanowire transfer

Summary report regarding the feasibility of different emitter structures for the transfer of IIIV nanowires to Silicon with low interface resistance and low emitter recombination in the silicon subcell Especially the feasibility of the backend processing has to be shown The surface has to be suitable for attaching the IIIV nanowires planarity low roughness no contamination and realize low ohmic resistance and low parasitic absorption 10