Report on the electrical properties of Esaki diodes between axial NW segments

Report on the electrical properties of Esaki diodes between axial NW segments The report will contain the results achieved on Esaki tunnelling diodes with respect to low bias resistance and the maximum doping achieved in the materials which will be related to the doping level necessary for degenerate doping. Dopant incorporation homogeneity will be included, as well as the results from Hall type of characterization, CV characterization, back gated type of measurements as well as resistivity in the materials.