Report on the status of Au-assisted nanowire growth on InP and GaAs substrates and growth of nanowires by use of Aerotaxy

The deliverable will include description of growth schemes for optimal pattern preservation 95 vertically standing NWs details on synthesis of the different materials with respect to materials composition and quality as a function of precursor molar fractions and growth temperature PL emission at band gap of 17 eV for GaInP and GaAsP It will also contain details on achieved doping levels in the nanowire materials grown by the different methods and details of the contact region between the substrate and the nanowires as determined by XRD and TEM and results from wafer recycling at least 3 times substrate reuse verified