Report on growth of doped ternary NW materials for pn-junctions.

This includes the effect of the different dopants (TESn, H2S, CP2Mg and DEZn on the growth dynamics and dopant incorporation if the ternary NW materials (targeted n type degenerate doping of 1x1019 for n and p type GaInP and GaAsP). It will contain an evaluation of the feasibility of using the different dopants and will lead to a choice of dopant for use in the project. The feasibility of using the different dopants in an Esaki diode in combination with the degenerately doped substrate, and in between segments in the NW will be evaluated (Esaki tunneling diode in 1 mm2 cells characterized).