Dopant-Induced Modifications of Ga x In (1– x ) P Nanowire-Based p–n Junctions Monolithically Integrated on Si(111)

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Authors: Nicolas Bologna, Stephan Wirths, Luca Francaviglia, Marco Campanini, Heinz Schmid, Vasileios Theofylaktopoulos, Kirsten E. Moselund, Anna Fontcuberta i Morral, Rolf Erni, Heike Riel, Marta D. Rossell

Journal title: ACS Applied Materials & Interfaces

Journal number: 10/38

Journal publisher: American Chemical Society

Published year: 2018

Published pages: 32588-32596

DOI identifier: 10.1021/acsami.8b10770

ISSN: 1944-8244