Report on realization of integrated light trapping structures into bottom cell

Progress report about the realization of the integration of light trapping structures into the Silicon bottom cell. This will allow current matching to the used top cell design. Special attention needs to be paid to checking the feasibility of the back-end processing. Performance of the light trapping will be confirmed by producing silicon test solar cell devices (> 1 cm2) and measurement of reflection properties and Quantum Efficiency in the spectral range of 300–1250 nm. The current enhancement induced by the light trapping structure will be at least 1 mA/cm2.