Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM

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Authors: P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J.O. Oelerich, W. Stolz, K. Volz

Journal title: Journal of Crystal Growth

Journal number: 524

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 125180

DOI identifier: 10.1016/j.jcrysgro.2019.125180

ISSN: 0022-0248