Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)

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Authors: A. Kumar, R. Cecchini, L. Locatelli et al.

Journal title: Crystal Growth & Design

Journal publisher: American Chemical Society

Published year: 2021

DOI identifier: 10.1021/acs.cgd.1c00328

ISSN: 1528-7483