Schottky-barrier thin-film transistors based on HfO 2 -capped InSe

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Yiming Wang, Jiawei Zhang, Guangda Liang, Yanpeng Shi, Yifei Zhang, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Qian Xin, Aimin Song

Journal title: Applied Physics Letters

Journal number: 115/3

Journal publisher: American Institute of Physics

Published year: 2019

Published pages: 033502

DOI identifier: 10.1063/1.5096965

ISSN: 0003-6951