All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

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Authors: Himadri Pandey, Mehrdad Shaygan, Simon Sawallich, Satender Kataria, Zhenxing Wang, Achim Noculak, Martin Otto, Michael Nagel, Renato Negra, Daniel Neumaier, Max C. Lemme

Journal title: IEEE Transactions on Electron Devices

Journal number: 65/10

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2018

Published pages: 4129-4134

DOI identifier: 10.1109/ted.2018.2865382

ISSN: 0018-9383