"Graphene Field-Effect Transistors With High Extrinsic <inline-formula> <tex-math notation=""LaTeX"">${f}_{T}$</tex-math> </inline-formula> and <inline-formula> <tex-math notation=""LaTeX"">${f}_{\mathrm{max}}$</tex-math> </inline-formula>"

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Authors: Marlene Bonmann, Muhammad Asad, Xinxin Yang, Andrey Generalov, Andrei Vorobiev, Luca Banszerus, Christoph Stampfer, Martin Otto, Daniel Neumaier, Jan Stake

Journal title: IEEE Electron Device Letters

Journal number: 40/1

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 131-134

DOI identifier: 10.1109/led.2018.2884054

ISSN: 0741-3106