Physical insights into the operation of a 1-nm gate length transistor based on MoS 2 with metallic carbon nanotube gate

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Authors: Marta Perucchini, Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone, Gianluca Fiori

Journal title: Applied Physics Letters

Journal number: 113/18

Journal publisher: American Institute of Physics

Published year: 2018

Published pages: 183507

DOI identifier: 10.1063/1.5054281

ISSN: 0003-6951