Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

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Authors: Quanshan Lv, Faguang Yan, Nobuya Mori, Wenkai Zhu, Ce Hu, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Kaiyou Wang

Journal title: Advanced Functional Materials

Journal number: 30/15

Journal publisher: John Wiley & Sons Ltd.

Published year: 2020

Published pages: 1910713

DOI identifier: 10.1002/adfm.201910713

ISSN: 1616-301X