Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe 2 Heterostructure

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Authors: Junhong Na, Youngwook Kim, Jurgen H. Smet, Marko Burghard, Klaus Kern

Journal title: ACS Applied Materials & Interfaces

Journal number: 11/23

Journal publisher: American Chemical Society

Published year: 2019

Published pages: 20973-20978

DOI identifier: 10.1021/acsami.9b02589

ISSN: 1944-8244