Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

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Authors: A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov

Journal title: Proc. International Conference on Solid State Devices and Materials (SSDM-2019)

Journal publisher: Japan Society of Applied Physics

Published year: 2019

Published pages: pp. 609 – 610