Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

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Authors: Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov

Journal title: IEEE Electron Device Letters

Journal number: 40/6

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 870-873

DOI identifier: 10.1109/led.2019.2913625

ISSN: 0741-3106