Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

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Authors: Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken

Journal title: 2019 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2019

Published pages: 1-7

DOI identifier: 10.1109/irps.2019.8720406

ISBN: 978-1-5386-9504-3