The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

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Authors: Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer

Journal title: 2020 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2020

Published pages: 1-7

DOI identifier: 10.1109/irps45951.2020.9128218

ISBN: 978-1-7281-3199-3