First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

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Authors: M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser

Journal title: 2019 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2019

Published pages: 24.1.1-24.1.4

DOI identifier: 10.1109/iedm19573.2019.8993630

ISBN: 978-1-7281-4032-2