Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

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Authors: A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill1, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. Tyaginov

Journal title: Proc. International Reliability Physics Symposium (IRPS-2019)

Journal publisher: IEEE

Published year: 2019

Published pages: p. 6С.2

DOI identifier: 10.1109/irps.2019.8720584