Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser

Journal title: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)

Journal publisher: IEEE

Published year: 2019

Published pages: 262-265

DOI identifier: 10.1109/essderc.2019.8901721

ISBN: 978-1-7281-1539-9