Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiO X interfacial layer for doping-free Si solar cells

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Authors: Jinyoun Cho, Maarten Debucquoy, Maria Recaman Payo, Shuja Malik, Miha Filipič, Hariharsudan Sivaramakrishnan Radhakrishnan, Twan Bearda, Ivan Gordon, Jozef Szlufcik, Jef Poortmans

Journal title: Energy Procedia

Journal number: 124

Journal publisher: Elsevier

Published year: 2017

Published pages: 842-850

DOI identifier: 10.1016/j.egypro.2017.09.356

ISSN: 1876-6102