Broadband Terahertz Power Detectors based on 90-nm Silicon CMOS Transistors with Flat Responsivity up to 2.2 THz

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Authors: Kestutis Ikamas, Dovile Cibiraite, Alvydas Lisauskas, Maris Bauer, Viktor Krozer, Hartmut G. Roskos

Journal title: IEEE Electron Device Letters

Journal number: vol. 39, no. 9

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2018

Published pages: 1-1

DOI identifier: 10.1109/LED.2018.2859300

ISSN: 0741-3106