Key Role of Oxygen-Vacancy Electromigration in the Memristive Response of Ferroelectric Devices

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Authors: C. Ferreyra, M. Rengifo, M.J. Sánchez, A.S. Everhardt, B. Noheda, D. Rubi

Journal title: Physical Review Applied

Journal number: 14/4

Journal publisher: APS

Published year: 2020

DOI identifier: 10.1103/physrevapplied.14.044045

ISSN: 2331-7019