Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS2. Here we investigate the energy efficiency scaling of such charge configuration memory

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Authors: Anze Mraz, Rok Venturini, Damjan Svetin, Vitomir Sever, Ian Aleksander Mihailovic, Igor Vaskivskyi, Bojan Ambrozic, Goran Dražić, Maria D’Antuono, Daniela Stornaiuolo, Francesco Tafuri, Dimitrios Kazazis, Jan Ravnik, Yasin Ekinci, and Dragan Mihailovic

Journal title: 1 of 1 Charge Configuration Memory Devices: Energy Efficiency and Switching Speed

Journal publisher: American Chemical Society

Published year: 2022

DOI identifier: 10.1021/acs.nanolett.2c01116

ISSN: 1530-6984