Lattice location study of low-fluence ion-implanted 124 In in 3C-SiC

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Authors: A. R. G. Costa, U. Wahl, J. G. Correia, E. David-Bosne, V. Augustyns, T. A. L. Lima, D. J. Silva, M. R. da Silva, K. Bharuth-Ram, L. M. C. Pereira

Journal title: Journal of Applied Physics

Journal number: 125/21

Journal publisher: American Institute of Physics

Published year: 2019

Published pages: 215706

DOI identifier: 10.1063/1.5097032

ISSN: 0021-8979