Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

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Authors: Filip Dominec, Alice Hospodková, Tomáš Hubáček, Markéta Zíková, Jiří Pangrác, Karla Kuldová, Aliaksei Vetushka, Eduard Hulicius

Journal title: Journal of Crystal Growth

Journal number: 507

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 246-250

DOI identifier: 10.1016/j.jcrysgro.2018.11.025

ISSN: 0022-0248