1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

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Authors: S. Kumar , K. Geens , A. Vohra , D. Wellekens , D. Cingu , E. Fabris , T. Cosnier, H. Hahn , B. Bakeroot , N. Posthuma , R. Langer, and S. Decoutere

Journal title: IEEE Electron Device Letters

Journal number: Volume: 45, Issue: 4,

Journal publisher: IEEE

Published year: 2024

DOI identifier: 10.1109/LED.2024.3361164

ISSN: 0741-3106