Summary
Devices comprising a magnetic nanowire (100nm - 1μm width) and/or a reservoir for domain nucleation, a local MI gate and an electrical detection point (Hall cross, AF-magnetoresistance) will be designed and fabricated with FM materials [UPSaclay,CEITEC, CNR]. Two designs based on domain nucleation and depinning/propagation, respectively, will be fabricated. Artificial nucleation points will be introduced by local He+ ion irradiation [Spin-Ion].
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