Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Manuel Belanche, Yoshiyuki Yonezawa, René Heller, Arnold Müller, Christof Vockenhuber, Corinna Martinella, Michael Rüb, Masashi Kato, Koichi Murata, Hidekazu Tsuchida, Koji Nakayama, Ulrike Grossner

Journal title: Materials Science in Semiconductor Processing

Journal number: 179

Journal publisher: Pergamon Press

Published year: 2024

Published pages: 108461

DOI identifier: 10.1016/j.mssp.2024.108461

ISSN: 1369-8001