Transient Negative Capacitance of Silicon-doped HfO 2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

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Authors: C. Gastaldi, A. Saeidi, M. Cavalieri, I. Stolichnov, P. Muralt, A. M. Ionescu

Journal title: 2019 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEDM 2019

Published year: 2019

Published pages: 23.5.1-23.5.4

DOI identifier: 10.1109/iedm19573.2019.8993523

ISBN: 978-1-7281-4032-2