Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors

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Authors: T. Francois, L. Grenouillet, J. Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, M. Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak

Journal title: Applied Physics Letters

Journal number: 118/6

Journal publisher: American Institute of Physics

Published year: 2021

Published pages: 062904

DOI identifier: 10.1063/5.0035650

ISSN: 0003-6951