Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

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Authors: T. Francois, C. Pellissier, S. Slesazeck, V. Havel, C. Richter, A. Makosiej, B. Giraud, E. T. Breyer, M. Materano, P. Chiquet, M. Bocquet, L. Grenouillet, E. Nowak, U. Schroeder, F. Gaillard, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup

Journal title: 2019 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEDM 2019

Published year: 2019

Published pages: 15.7.1-15.7.4

DOI identifier: 10.1109/IEDM19573.2019.8993485

ISBN: 978-1-7281-4032-2