Conductive metal oxide and hafnium oxide bilayer resistive random-access memory: An <i>ab initio</i> study

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Authors: Antoine Honet, Aida Todri-Sanial

Journal title: Journal of Applied Physics

Journal number: 137

Journal publisher: AIP Publishing

Published year: 2025

DOI identifier: 10.1063/5.0246959

ISSN: 0021-8979