On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices

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Authors: Mischa Thesberg, Tetiana Obukhova, Damien Deleruyelle, Jens Trommer, Thomas Mikolajick, Oskar Baumgartner, Franz Schanovsky, Zlatan Stanojević, Markus Karner

Journal title: IEEE Transactions on Electron Devices

Journal number: 71

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2024

Published pages: 6686-6690

DOI identifier: 10.1109/ted.2024.3459878

ISSN: 0018-9383