One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering

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Authors: Md. Hasnat Rabbi, MD Redowan Mahmud Arnob, Sabiqun Nahar, Abul Tooshil, Jin Jang

Journal title: Advanced Functional Materials

Journal number: 35

Journal publisher: Wiley

Published year: 2025

DOI identifier: 10.1002/ADFM.202416238

ISSN: 1616-301X