High-Speed Issues Mitigation of GaN Power Transistors Based on a New Gate Driving Profile

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Authors: Gómez Rivera, Luis Felipe; Paredes Camacho, Alejandro; Romeral Martínez, José Luis

Journal title: 2024 Energy Conversion Congress & Expo Europe (ECCE Europe)

Journal publisher: IEEE

Published year: 2024

DOI identifier: 10.1109/ECCEEUROPE62508.2024.10751870