Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices

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Authors: Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos, Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea and Antoniou, Marina

Journal publisher: IEEE

Published year: 2024

DOI identifier: 10.1109/ISPSD59661.2024.10579567

ISSN: 1946-0201