Cryogenic behavior of high-permittivity gate dielectrics: The impact of atomic layer deposition temperature and the lithographic patterning method

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Alessandro Paghi, Sebastiano Battisti, Simone Tortorella, Giorgio De Simoni, Francesco Giazotto

Journal title: Journal of Applied Physics

Journal number: 137

Journal publisher: American Institute of Physics

Published year: 2025

DOI identifier: 10.1063/5.0250428

ISSN: 0021-8979