3D simulation of silicon-based single-electron transistors

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: F. J. Klupfel, P. Pichler

Journal title: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2017

Published pages: 77-80

DOI identifier: 10.23919/SISPAD.2017.8085268

ISBN: 978-4-86348-610-2